| PART |
Description |
Maker |
| LP62E16256C-TSERIES LP62E16256CU-60LLT LP62E16256C |
256K X 16 BIT LOW VOLTAGE CMOS SRAM
60ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM
70ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
| BD1482EFJ |
Low Standby Current during Shutdown Mode
|
Rohm
|
| TEA1703TS |
GreenChip SMPS standby control IC
Secondary side controller enabling very low standby power
|
NXP Semiconductors
|
| LP62S1024BM-55LLT LP62S1024BM-70LLT LP62S1024B-T L |
55ns; operating current:30mA; standby current:5uA; 128K x 8bit low voltage CMOS SRAM
128K X 8 BIT LOW VOLTAGE CMOS SRAM
|
AMICC[AMIC Technology]
|
| CS59201-D |
Winchester Servo Preamplifier with Low Current Drain
|
ON Semiconductor
|
| ADM6711 ADM6711LAKS ADM6711MAKS ADM6711RAKS ADM671 |
XSTR, FET BS170TMOS SWITCHING
PHOTO TRANSISTOR, NPN, SILICON; Channels, No. of:1; Output type:Transistor; Current, input:50mA; Voltage, output max:70V; Case style:3-TO-18; Mounting type:Through Hole RoHS Compliant: Yes 微处理器监控电路4引脚SC70
Microprocessor Supervisory Circuit in 4-Lead SC70 微处理器监控电路4引脚SC70
RES 1K-OHM 5% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
SENSOR, OPTICAL, TRANSISTOR O/P; RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:0.5A; On-Resistance, Rds(on):2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-92; Drain-Source Breakdown Voltage:60V RoHS Compliant: No
Microprocessor Supervisory Circuit in 4-Lead SC70, Active-Low Push-Pull Output
Microprocessor Supervisory Circuit in 4-Lead SC70, Active-Low Open-Drain Output
|
Analog Devices, Inc.
AD[Analog Devices]
|
| NCP1201_06 NCP1201 NCP1201D100R2 NCP1201D100R2G NC |
PWM Current−Mode Controller for Universal Off−Line Supplies Featuring Low Standby Power with Fault Protection Modes
|
ONSEMI[ON Semiconductor]
|
| BU7233YF-CE2 |
Input Full Swing Open Drain Output Low Supply Current CMOS Comparators
|
Rohm
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| SP8855 SP8855E |
2.8GHz Parallel Load Professional Synthesiser
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test
|
Mitel Semiconductor
MITEL[Mitel Networks Corporation]
|
| TSH95ID TSH95I TSH95 5243 |
HIGH SPEED LOW POWER QUAD OP-AMP WITH DUAL STANDBY POSITION
From old datasheet system
HIGH SPEED LOW POWER QUAD OPERATIONAL AMPLIFIER WITH DUAL STANDBY POSITION
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State
GE Solid State
|
